Datasheet4U Logo Datasheet4U.com

TK20A60U - N-Channel MOSFET

Key Features

  • Low drain-source on-resistance: RDS(ON) = 0.165Ω (typ. ).
  • Low leakage current: IDSS = 100μA (max) (VDS = 600 V).
  • Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK20A60U Silicon N-Channel MOSFET Toshiba
TK20A60W Silicon N-Channel MOSFET Toshiba Semiconductor
TK20A60W5 Silicon N-Channel MOSFET Toshiba Semiconductor
TK20A Current Transducer Topstek
TK20A20D Silicon N-Channel MOSFET Toshiba

Other Datasheets by Inchange Semiconductor

Part Number Description
TK20A60W N-Channel MOSFET
TK20A60W5 N-Channel MOSFET
TK20A20D N-Channel MOSFET
TK20A25D N-Channel MOSFET
TK20E60U N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK20A60U, ITK20A60U ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.165Ω (typ.) ·Low leakage current: IDSS = 100μA (max) (VDS = 600 V) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 45 Tj Max.