TK35A65W - Silicon N-Channel MOSFET

Toshiba

Key Features

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.068 Ω (typ. ) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 2.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-09 2014-02-25 Rev.2.0 TK35A65W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC).

TK35A65W silicon n-channel mosfet by Toshiba - Datasheet Preview

Datasheet Details

Part number	TK35A65W
Manufacturer	Toshiba
File Size	237.32 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK35A65W Datasheet

Full PDF Text Transcription for TK35A65W (Reference)

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TK35A65W MOSFETs Silicon N-Channel MOS (DTMOS) TK35A65W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = ...

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ors 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.068 Ω (typ.) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 2.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-09 2014-02-25 Rev.2.0 TK35A65W 4.

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