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TK35A65W - Silicon N-Channel MOSFET

Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.068 Ω (typ. ) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 2.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-09 2014-02-25 Rev.2.0 TK35A65W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC).

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Datasheet Details

Part number TK35A65W
Manufacturer Toshiba Semiconductor
File Size 237.32 KB
Description Silicon N-Channel MOSFET
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TK35A65W MOSFETs Silicon N-Channel MOS (DTMOS) TK35A65W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.068 Ω (typ.) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 2.1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-09 2014-02-25 Rev.2.0 TK35A65W 4.
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