Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
(π-MOSⅦ)
Switching Regulator Applications
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- - Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit:...
