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TK4A60DA - N-Channel MOSFET

Features

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  • Low drain-source on-resistance: RDS(ON) = 1.7Ω (typ. ).
  • Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK4A60DA，ITK4A60DA ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.7Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 3.5 IDM Drain Current-Single Pulsed 14 PD Total Dissipation @TC=25℃ 35 Tj Max.
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