TK4A60DB - N-Channel MOSFET

Toshiba

Key Features

ce industry, medical equipmen.

TK4A60DB n-channel mosfet by Toshiba - Datasheet Preview

Datasheet Details

Part number	TK4A60DB
Manufacturer	Toshiba
File Size	183.79 KB
Description	N-Channel MOSFET
Datasheet	TK4A60DB Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TK4A60DB	N-Channel MOSFET	INCHANGE
TK4A60D	N-Channel MOSFET	INCHANGE
TK4A60D	N-Channel 650V Power MOSFET	VBsemi
TK4A60DA	N-Channel MOSFET	Toshiba
TK4A60DA	N-Channel MOSFET	INCHANGE

Other Datasheets by Toshiba

Part Number	Description
TK4A60D	N-Channel MOSFET
TK4A65DA	N-Channel MOSFET
TK4A50D	N-Channel MOSFET
TK4A53D	N-Channel MOSFET
TK4A55D	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A 2.54 0.64 ± 0.15 • • • • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 3.7 14.8 35 173 3.7 3.5 150 −55 to 150 Unit V V A W mJ A mJ °C °C 15.0 ± 0.