TK60D08J1 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) Switching Regulator Application - - - - - - High-Speed switching Small gate charge: Qg = 86 n C (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 m A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 75 75 ±20 60 240 140 498 60 9.2 150 - 55 to 150 Unit V V V A W m J A m J °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.89 83.3 Unit °C/W °C/W Internal Connection 2 1 Note 1: Ensure that the channel & lead temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C, L = 200 μH, IAR = 60 A, RG = 1Ω Note 3: Repetitive rating; pulse width limited by maximum channel temperature....