TK60P03M1 - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TK60P03M1
Manufacturer	Toshiba Semiconductor
File Size	230.72 KB
Description	MOSFETs
Datasheet	TK60P03M1 Datasheet
Additional preview pages of the TK60P03M1 datasheet.

(1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 13 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain cu.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 5, 2014 |