TK60P03M1
TK60P03M1 is MOSFETs manufactured by Toshiba.
Features
(1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 13 n C (typ.) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 m A)
3. Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
DPAK
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (Note 2) (Note 1) (Note 1) (RGS = 20 kΩ) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR Tch Tstg Rating 30 30 ±20 60 120 63 94 60 150 -55 to 150 W m J A A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2011-07-22 Rev.2.0
5. Thermal Characteristics
Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 1.98 125 Unit /W
Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 24 V, Tch = 25 (initial), L = 0.02 m H, RG = 1.2 Ω, IAR = 60 A
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
2011-07-22 Rev.2.0
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristi...
