TPC6067 - MOSFETs

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Toshiba Semiconductor

Part number	TPC6067
Manufacturer	Toshiba Semiconductor
File Size	224.82 KB
Description	MOSFETs
Datasheet	TPC6067 Datasheet
Additional preview pages of the TPC6067 datasheet.

(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 5, 6:Drain 3: Gate 4: Source VS-6 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissip.

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Published: Aug 27, 2014 |