TPC8076 - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TPC8076
Manufacturer	Toshiba Semiconductor
File Size	235.00 KB
Description	MOSFETs
Datasheet	TPC8076 Datasheet
Additional preview pages of the TPC8076 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.9 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (p.

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Published: Aug 31, 2014 |