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TPC8A07-H - N-Channel MOSFET

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TPC8A07-H www.DataSheet4U.com TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable-Equipment Applications • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: (Q1) QSW = 3.4 nC (typ.) (Q2) QSW = 3.6 nC (typ.) Low drain-source ON-resistance: (Q1) RDS (ON) = 21 mΩ (typ.) (Q2) RDS (ON) = 14 mΩ (typ.) Low leakage current: (Q1) IDSS = 10 μA (max) (VDS = 30 V) (Q2) IDSS =100μA (max) (VDS = 30 V) Enhancement mode: (Q1) Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA) (Q2) Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.