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TPCA8021-H www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8021-H
High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications
6.0±0.3 0.5±0.1 8 1.27 0.4±0.1 5
Unit: mm
0.05 M A
• • • • • • •
Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 6.9nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.8 mΩ (typ.) High forward transfer admittance: |Yfs| =46 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
5.0±0.2
0.15±0.05
1 5.0±0.2 0.95±0.05
4
0.595 A 0.166±0.05
S 1
0.05 S 4 1.1±0.2
0.6±0.1
4.25±0.