Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications
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- Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 3.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 72 S (typ.)
0.95 ± 0.05 6.0 ± 0.3 5.0 ± 0.2
Unit: mm
1.27 0.4 ± 0.1 8 5 0.05 M A
0.15 ± 0.05
Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
5.0 ±...