TPCA8135 - MOSFETs Silicon P-Channel MOS

Product Overview

Toshiba Semiconductor

Part number	TPCA8135
Manufacturer	Toshiba Semiconductor
File Size	300.15 KB
Description	MOSFETs Silicon P-Channel MOS
Datasheet	TPCA8135 Datasheet
Additional preview pages of the TPCA8135 datasheet.

(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate SOP Advance www. DataSheet. net/ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain curren.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Nov 6, 2012 |