TPCC8102 Description
TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ) TPCC8102 Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 14.5 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) Enhancement mode:.