TPCC8103 Description
TPCC8103 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ) TPCC8103 Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 9.4 mΩ (typ.) (VGS = −10 V) Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) Enhancement mode:.