Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications
- -
- -
- Lead(Pb)-Free Low drain-source ON resistance : P Channel RDS (ON) = 55 mΩ (typ.) N Channel RDS (ON) = 31 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 6.0 S (typ.) N Channel |Yfs| = 8.6 S (typ.) Low leakage current : P Channel IDSS =
- 10 μA (VDS =
- 40 V) N Channel IDSS = 10 μA (VDS = 40 V) Enhancement mode : P Channel Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit: mm
0.33±0.05 0.05 M A
8 5
2.4±0.1 0.475
1 4
0.65...