TPCP8404 - Field Effect Transistor

Toshiba

Key Features

Coss Crss.
0.4 10.
0.1.
1.
10.
100 0.
80.
40 0 40 80 120 160 Drain.
source voltage VDS (V) Ambient temperature Ta (°C) PD.
Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note.

TPCP8404 field effect transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	TPCP8404
Manufacturer	Toshiba
File Size	310.18 KB
Description	Field Effect Transistor
Datasheet	TPCP8404 Datasheet

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Full PDF Text Transcription (Reference)

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TPCP8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOⅤ/U-MOSⅣ) TPCP8404 Portable Equipment Applications Motor Drive Applications • Low drain-source ON-resistance : P Channel RDS (ON) = 38 mΩ(typ.) (VGS=−10V) N Channel RDS (ON) = 38 mΩ(typ.) （VGS=10V) High forward transfer admittance : P Channel |Yfs| = 7.3 S (typ.) N Channel |Yfs| = 8 S (typ.) Low leakage current : P Channel IDSS = −10 μA (max) (VDS = −30 V) N Channel IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) 0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 0.475 1 4 • • • 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.