Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOⅤ/U-MOSⅣ)
Portable Equipment Applications Motor Drive Applications
- Low drain-source ON-resistance : P Channel RDS (ON) = 38 mΩ(typ.) (VGS=- 10V) N Channel RDS (ON) = 38 mΩ(typ.) （VGS=10V) High forward transfer admittance : P Channel |Yfs| = 7.3 S (typ.) N Channel |Yfs| = 8 S (typ.) Low leakage current : P Channel IDSS =
- 10 μA (max) (VDS =
- 30 V) N Channel IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode : P Channel Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
0.33±0.05 0.05 M A
8 5
Unit: mm
2.4±0.1 0.475
1 4
- -
- 0.65 2.9±0.1
0.05 M...