TPCP8402
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
..
Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications
- Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 6.0 S (typ.) N Channel |Yfs| = 7.0 S (typ.) Low leakage current : P Channel IDSS =
- 10 µA (VDS =
- 30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement- mode : P Channel Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1m A) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1m A) Unit: mm
- -
Note 7 5 6 7 8 Drain2 Drain2 Drain1 Drain1
- 1 2 3 4
Source1 Gate1 Source2 Gate2
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD...
