TPCP8401
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π -MOS Ⅵ) ..
○ Switching Regulator Applications ○ Load Switch Applications
- -
- -
- Lead(Pb)-Free Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive Small footprint due to small and thin package Low drain-source ON resistance : P Channel RDS (ON) = 31 mΩ (typ.) Low drain-source ON resistance High forward transfer admittance : P Channel |Yfs| = 13 S (typ.)
- - Low leakage current : P Channel IDSS =
- 10 µA (VDS =
- 12 V) Enhancement- mode : P Channel Vth =
- 0.5 to
- 1.2 V (VDS =
- 10 V, ID =
- 200 µA)
1．Source(Nch） 5．Gate(Pch)
Unit: mm
0.33±0.05 0.05 M A
8 5
2.4±0.1 0.475
1 4
0.65 2.9±0.1
0.05 M B
0.8±0.05 0.025
0.17±0.02
0.28 +0.1 -0.11
1.12 -0.12
+0.13
1.12 +0.13 -0.12 0.28 +0.1 -0.11
Absolute Maximum Ratings (Ta = 25°C) P-ch
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current...
