Datasheet Summary
MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)
1. Applications
- - Cell Phones Motor Drivers
2. Features
(1) Low drain-source on-resistance P-channel RDS(ON) = 33 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (2) Low leakage current P-channel IDSS = -10 µA (VDS = -40 V), N-channel IDSS = 10 µA (VDS = 40 V) (3) Enhancement mode P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA), N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1
PS-8
2011-03-14 Rev.2.0
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