TPCP8603
TOSHIBA Transistor Silicon PNP Epitaxial Type
..
High-Speed Switching Applications DC/DC Converters Strobe Applications
- -
- High DC current gain: h FE = 120～300 (IC =
- 0.1 A) Low collector-emitter saturation voltage: VCE (sat) =
- 0.2 V (max) High-speed switching: tf = 120 ns (typ.)
1 4
Unit: mm
0.33±0.05 0.05 M A
8 5
2.4±0.1 0.65 2.9±0.1
0.05 M B
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-vase voltage Collector-emitter voltage Collector-emitter voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range t = 10 s DC DC (Note 1) Symbol VCBO VCEO VEBO IC ICP IB PC (Note 2) Tj Tstg Rating
- 120
- 120
- 7
- 1.0
- 2.0 0.1 3.00 1.25 150
- 55~150 Unit V V V A A A W W °C °C
0.8±0.05 0.025
0.17±0.02
0.28 +0.1 -0.11
+0.13
1.12 -0.12
1.12 +0.13 -0.12 0.28 +0.1 -0.11
Pulsed (Note 1)
2.
Collector Collector 3. Collector 4. Base
1.
Emitter Collector 7. Collector 8. Collector
5. 6.
JEDEC...
