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TPCP8H01
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
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TPCP8H01
2.4±0.1 0.475
1 4
Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN transistor) Low collector-emitter saturation voltage: VCE (sat) = 0.13 V (max) (NPN transistor) High-speed switching: tf = 25 ns (typ.) (NPN transistor)
0.65 2.9±0.1
B A
0.05 M B
0.8±0.05
S
0.025
S
0.17±0.02
0.28 +0.1 -0.11
+0.
TPCP8H01 Datasheet
