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TPCP8H02
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
TPCP8H02
STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS
0.33±0.05
0.05 M A
8
5
2.4±0.1 2.8±0.1
Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive
High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN transistor) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
(NPN transistor) High-speed switching: tf = 25 ns (typ.
TPCP8H02 Datasheet
