TPCS8212 - Silicon N Channel MOS Type (U-MOSIII)

Toshiba

Key Features

ontained herein is subject to change without notice. 7 2002.

TPCS8212 silicon n channel mos type (u-mosiii) by Toshiba - Datasheet Preview

Datasheet Details

Part number	TPCS8212
Manufacturer	Toshiba
File Size	340.70 KB
Description	Silicon N Channel MOS Type (U-MOSIII)
Datasheet	TPCS8212 Datasheet

Other Datasheets by Toshiba

Part Number	Description
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TPCS8204	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8205	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8208	N-Channel MOSFET
TPCS8209	High performance/ Low Cost 20 pin OTP
TPCS8209	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

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TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications • • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Common drain Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 20 20 ±12 6 24 1.