TPCS8212 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications - - - - - - Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) mon drain Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 20 20 ±12 6 24 1.1 Unit V V V A Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Drain power dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note 3a) JEDEC JEITA TOSHIBA ― ― 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration 0.35 8 46.8 6 0.075 150 - 55~150 m J A m J °C °C 1 2 3 4 7 6 5 Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution. 2002-01-17 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 114 °C/W 167 Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) 208 °C/W 357 Marking (Note 6) Type S8212 ※ Note 1: Please use devices on condition that the...