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TPD1032F - 2-IN-1 Low-Side Power Switch

General Description

Pin No.

Source pin 1 Input pin 1 This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently.

Key Features

  • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip.
  • Can directly drive a power load from a CMOS or TTL logic. Weight: 0.08 g (typ. ).
  • Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter).
  • Low Drain-Source ON-resistance: RDS (ON) = 0.4 Ω (max) (@VIN = 5 V, ID = 1 A, Tch = 25°C).
  • Low Leakage.

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Datasheet Details

Part number TPD1032F
Manufacturer Toshiba
File Size 216.15 KB
Description 2-IN-1 Low-Side Power Switch
Datasheet download datasheet TPD1032F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPD1032F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1032F 2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1032F is a 2-IN-1 low-side switch. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC is equipped with intelligent self-protection functions. Features • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip. • Can directly drive a power load from a CMOS or TTL logic. Weight: 0.08 g (typ.) • Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter). • Low Drain-Source ON-resistance: RDS (ON) = 0.