TPD4102K Datasheet | Toshiba

Features - - - - - - - - Bootstrap circuit gives simple high side supply Bootstrap diode is built in PWM and 3-phase decoder circuit are built in Outputs Rotation pulse signals 3-phase bridge output using IGBTs FRDs are built in Incorporating over current and under voltage protection, and thermal shutdown Package: 23-pin HZIP This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected against electrostatic discharge. Weight HZIP23-P-1.27F : 6.1 g (typ.) HZIP23-P-1.27G : 6.1 g (typ.) HZIP23-P-1.27H : 6.1 g (typ.) Data Sheet 4 U . 2002-12-18 .. Pin Assignment 1 VS 2 3 4 5 6 7 OS RREF GND VREG VCC IS1 8 NC 9 U 10 11 12 13 14 BSU VBB1 V BSV NC 15 16 17 18 19 W BSW VBB2 IS2 HU 20 21 22 23 HV HW F/R FG Marking Toshiba trademark - TPD4102K JAPAN Lot No. Product No - Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Data Sheet 4 U . 2002-12-18 .. Block Diagram VCC 6 10 BSU 13 BSV 16 BSW 6V regulator Undervoltage protection Under- Under- Undervoltage voltage voltage protect- protect- protection ion ion Level shift high-side driver Thermal shutdown 9 U 12 V 15 W Low-side driver PWM 11 VBB1 17 VBB2 VREG 5 HU 19 HV 20 HW 21 F/R 22 FG 23 3-phase distribution logic VS 1 OS 2 RREF 3 Triangular wave generator 18 IS2 Over current protection 7 IS1 4...