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TPD7101F Datasheet 2-channel High-Side N-ch Power MOSFET Gate Driver

Manufacturer: Toshiba

Datasheet Details

Part number TPD7101F
Manufacturer Toshiba
File Size 294.06 KB
Description 2-channel High-Side N-ch Power MOSFET Gate Driver
Download TPD7101F Download (PDF)

General Description

TPD7101F Pin No.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Symbol Pin Description CP2 − CP 1− CP1 + CP2+ CPV+ N.C.

VGS1 Vsense1 VGS2 Vsense2 GND GND IN2 IN1 DIAG2-1 DIAG2-2 DIAG1-1 DIAG1-2 ENB Negative side connecting pin for the charge pump’s second capacitor Negative side connecting pin for the charge pump’s first capacitor Positive side connecting pin for the charge pump’s first capacitor Positive side connecting pin for the charge pump’s second capacitor Positive side connecting pin for the charge pump’s third capacitor: Although about three times the VDD voltage is generated, it is limited to about 28 V by a voltage clamping circuit.

Overview

TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7101F 2 channel High-Side N-ch Power MOSFET Gate Driver TPD7101F The TPD7101F is a 2 channel high-side N-ch power MOSFET gate driver.

This IC contains a power MOSFET driver and power MOSFET protective and diagnostic functions, allowing easy configuration of a high-side switch for large-current applications.

Key Features

  • z The large-current charge pump allows for fast switching z Power MOSFET protective and diagnostic functions are built-in. Protective functions: Overvoltage (internal device protection), overcurrent protection, VDD voltage drop detection.
  • Overvoltage is internally limited. No detection or shutdown functions Weight: 0.29g(typ. ) are included. Diagnostic functions: Overcurrent z The level of overcurrent detection can set by external resistor. z Package: SSOP-24 (300 mil) with embosse.