TPD7106F Datasheet PDF (1-channel High-Side N channel Power MOSFET Gate Driver)

TPD7106F - 1-channel High-Side N channel Power MOSFET Gate Driver

Description

TPD7106F is a 1channel high-side N channel power MOSFET gate driver.

This IC contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications.

Junction Boxes for Automotive.

Power distribution modules fo

Features

AEC-Q100 qualified.
Built in the charge pump circuit (Charge pump capacitor is external).
Output current is -10mA / +400mA, and the drive by parallel use of N channel power MOSFET is possible.
Built in the protection for reverse connection of power supply.
Built in the diagnosis output for under voltage of Charge pump circuit.
SSOP16 package for surface mounting. Note: Due to its MOS structure. This product is sensitive to static electricity. © 2019 1 Tosh.

Datasheet Details

Part number	TPD7106F
Manufacturer	Toshiba
File Size	622.12 KB
Description	1-channel High-Side N channel Power MOSFET Gate Driver
Datasheet	TPD7106F Datasheet
Additional preview pages of the TPD7106F datasheet.

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Full PDF Text Transcription

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TOSHIBA Intelligent Power Device Silicon Power MOS Integrated Circuit TPD7106F 1 channel High-Side N channel Power MOSFET Gate Driver 1. Description TPD7106F is a 1channel high-side N channel power MOSFET gate driver. This IC contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications. TPD7106F TPD7106F 2. Applications ● Junction Boxes for Automotive. ● Power distribution modules for Automotive. ● Semiconductor relays. SSOP16-P-225-0.65B 3. Features ● AEC-Q100 qualified. ● Built in the charge pump circuit (Charge pump capacitor is external). ● Output current is -10mA / +400mA, and the drive by parallel use of N channel power MOSFET is possible. ● Built in the protection for reverse connection of power supply.

Published: May 1, 2024 |