USF05G49 Datasheet | Toshiba

.. TOSHIBA THYRISTOR SILICON PLANAR TYPE LOW POWER SWITCHING AND CONTROL APPLICATIONS Repetitive Peak Off- State Voltage : VDRM = 400 V Repetitive Peak Reverse Voltage : VRRM = 400 V Average On- State Current : IT (AV) = 500 m A Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State Voltage and Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage (Non- Repetitive<5ms, Tj = 0~125°C) Average On- State Current (Half Sine Waveform) R.M.S On- State Current Peak One Cycle Surge On- State Current (Non- Repetitive) I t Limit Value Critical Rate of Rise of On-State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range SYMBOL VDRM VRRM VRSM IT (AV) IT (RMS) ITSM I t di / dt PGM PG(AV) VFGM VRGM IGM Tj Tstg RATING 400 UNIT V 500 500 800 9 (50Hz) 10 (60Hz) 0.4 10 0.1 0.01 3.5 - 5 125 - 40~125 - 40~125 V m A m A A A s A / µs W W V V m A °C °C JEDEC JEITA TOSHIBA ― ― 13-5B1A Weight: 0.2 g (typ.) Note: Should be used with gate resistance as shown below. Note 1: di / dt Test condition: i G = 5m A, tgw = 10µs, tgr≤250ns MARKING Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2004-07-06 .. ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current and Repetitive Peak Reverse Current Peak On- State Voltage Gate Trigger Voltage Gate Trigger Current Holding Current Critical Rate of Rise of Off- State Voltage Gate Turn- On Time Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT IH dv / dt tgt Rth(j- a) TEST CONDITION VDRM = VRRM = Rated ITM = 1A VD = 6V, RL = 100Ω RGK = 1kΩ ITM = 500m A, VD = 6V RGK = 1kΩ VDRM = Rated, RGK = 1kΩ Exponential Rise VD = Rated, i G = 5m A RGK = 1kΩ Junction to Ambient MIN ― ― ― ― ― ― ― ― TYP. ― ― ― ― ― 200 ― ― MAX 10 1.5 0.8 200 6 ― 1.5 70 UNIT µA V V µA m A V / µs µs °C...