USF10J48 Datasheet | Toshiba

.. SF10G48,SF10J48,USF10G48,USF10J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G48,SF10J48,USF10G48,USF10J48 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off- State Voltage : VDRM = 400,600V l Repetitive Peak Reverse Voltage l Average On- State Current l Gate Trigger Current SF10G48- SF10J48 : VRRM = 400,600V : IT (AV) = 10A : IGT = 10m A MAX. Unit: mm USF10G48- USF10J48 JEDEC JEITA TOSHIBA ― ― 13- 10J1B JEDEC JEITA TOSHIBA ― ― 13- 10J2B Weight: 1.7g MARKING - 1 MARK F10G48 F10J48 TYPE NAME SF10G48, USF10G48 ASF10J48, USF10J48 - 2 2001-07-10 .. SF10G48,SF10J48,USF10G48,USF10J48 MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State Voltage and Repetitive Peak Reverse Voltage Non- Repetitive Peak Reverse Voltage (Non- Repetitive <5ms, Tj = 0~125°C) SF10G48 USF10G48 SF10J48 USF10J48 SF10G48 USF10G48 SF10J48 USF10J48 SYMBOL RATING 400 V 600 500 VRSM 720 IT (AV) IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg UNIT VDRM VRRM Average On- State Current R.M.S On- State Current Peak One Cycle Surge On- State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On- State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 10 16 160 (50Hz) 176 (60Hz) 125 100 5 0.5 10 - 5 2 - 40~125 - 40~125 A A A A s A / µs W W V V A °C °C Note 1: VDRM = 0.5 × Rated, ITM ≤ 30A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current and Repetitive Peak Reverse Current Peak On- State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non- Trigger Voltage Critical Rate of Rise of Off- State Voltage Holding Current Latching Current Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT VGD dv /dt IH IL Rth (j- c) TEST CONDITION VDRM = VRRM = Rated ITM = 30A VD = 6V, RL = 10Ω VD = Rated × 2 / 3, Tc = 125°C VDRM = Rated, Tc = 125°C...