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1SS302A - Silicon Epitaxial Planar Switching Diodes

Key Features

  • (1) AEC-Q101 qualified (Note 1) (2) Fast reverse recovery time : trr = 1.6 ns (typ. ) Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit USM 1SS302A 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 ©2017-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2014-12 2022-11-22 Rev.5.0 1SS302A 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Note Rating Unit Peak.

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Datasheet Details

Part number 1SS302A
Manufacturer Toshiba
File Size 186.97 KB
Description Silicon Epitaxial Planar Switching Diodes
Datasheet download datasheet 1SS302A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes Silicon Epitaxial Planar 1SS302A 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) (2) Fast reverse recovery time : trr = 1.6 ns (typ.) Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit USM 1SS302A 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 ©2017-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2014-12 2022-11-22 Rev.5.0 1SS302A 4.