Toshiba 1SS381
Silicon Epitaxial Planar Type diode
| Part No. | 1SS381 |
|---|---|
| Datasheet | 1SS381 Download |
| Manufacturer |  Toshiba |
| Description | Silicon Epitaxial Planar Type diode |
| Buy | Stock & Price |
APPLICATIONS
● Small package● Small total capacitance: CT = 1.2 pF (max)
● Low series resistance: rs = 0.6 Ω (typ.)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 30 V IF 100 mA Tj 125 °C Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Forward voltage Reverse current...
