Toshiba 1SS396
Silicon Epitaxial Schottky Barrier Type Diode
| Part No. | 1SS396 |
|---|---|
| Datasheet | 1SS396 Download |
| Manufacturer |  Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Operating temperature range VRM VR IFM IO IFSM P Tj Tstg Topr 45 V 40 V 300 * mA 100 * mA 1* A 150 mW 125 °C −55 to 125 °C −40 to 100 °C 1 3 2 JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1S Weight: 12 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating.
