2SA1158 - SILICON PNP TRANSISTOR

Toshiba

Key Features

. High Breakdwon Voltage : VceO=-80V . Low Noise Figure : NF=ldB(Typ. ) , 10dB(Max. ) . Excellent hpE Linearity : hFE (0.
1mA) /hFE (2mA) =0 . 90 (Typ.
Complementary to 2SC2868. Unit in mm 51MAX.

2SA1158 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SA1158
Manufacturer	Toshiba
File Size	96.15 KB
Description	SILICON PNP TRANSISTOR
Datasheet	2SA1158 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1158 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Breakdwon Voltage : VceO=-80V . Low Noise Figure : NF=ldB(Typ.) , 10dB(Max.) . Excellent hpE Linearity : hFE (0 • 1mA) /hFE (2mA) =0 . 90 (Typ . • Complementary to 2SC2868. Unit in mm 51MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation' Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO VEBO ic IB PC L stg RATING -80 -80 -5 -100 -50 400 125 -55-125 UNIT mA mA mW 1.27 L27 i EMITTER 2. COLLECTOR a. BASE JEDEC TO-92 EIAJ SC-43 TOSHIBA Weight : 0.