• Part: 2SA1158
  • Description: SILICON PNP TRANSISTOR
  • Manufacturer: Toshiba
  • Size: 96.15 KB
Download 2SA1158 Datasheet PDF
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Datasheet Summary

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. Features . High Breakdwon Voltage : VceO=-80V . Low Noise Figure : NF=ldB(Typ.) , 10dB(Max.) . Excellent hpE Linearity : hFE (0 - 1mA) /hFE (2mA) =0 . 90 (Typ . - plementary to 2SC2868. Unit in mm 51MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation' Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO VEBO ic IB PC L stg RATING -80 -80 -5 -100 -50 400 125 -55-125 UNIT mA mA mW L27 i EMITTER 2. COLLECTOR a....