Toshiba 2SA1822
Silicon NPN Transistor
| Part No. | 2SA1822 |
|---|---|
| Datasheet | 2SA1822 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
High-Speed DC-DC Converter Application 2SA1822 Unit: mm● Excellent switching times : ton = 1.0 µs (max), tf = 1.0 µs (max) at IC = −0.3 A
● High collector breakdown voltage: VCEO = −400 V
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −400 V Collector-emitter voltage VCEO −400 V Emitter-base voltage VEBO −7 V Collector current IC −1 A Base current IB −0.5 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.0 W 25 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability...
