2SA2182 Description
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 80 MHz (typ.) 2SA2182 Unit: mm Ratings (Tc = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO − 230 V Collector-emitter voltage VCEO − 230 V Emitter-base voltage VEBO −5 V Collector current Base current DC pulse IC − 1.0 A ICP − 2.0 A IB − 100 mA 1.