2SA2183 - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	2SA2183
Manufacturer	Toshiba
File Size	179.67 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	2SA2183 Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications • Low collector-emitter saturation : VCE(sat) = −1.0 V（max） 2SA2183 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −60 V Emitter-base voltage VEBO −7 V Collector current DC Pulse IC ICP −5.0 −8.0 A A Base current IB −0.5 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC Tj Tstg 2 20 150 −55 to 150 W W °C °C 1 : Base 2 : Collector 3 : Emitter JEDEC ― Note: Using continuously under heavy loads (e.g.