2SA499 - Silicon PNP Epitaxial Transistor

Toshiba

Key Features

High Breakdown Voltage : VcBO=-50V (Min. ) (2SA499) : VCBO=-30V (Min. ) (2SA500).
High Transition Frequency : f T=250MHz (Typ. ).
Fast Switching Speed : t on=25ns (Typ. ).
Complementary to 2SC400 and 2SC979.

2SA499 silicon pnp epitaxial transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SA499
Manufacturer	Toshiba
File Size	117.56 KB
Description	Silicon PNP Epitaxial Transistor
Datasheet	2SA499 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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II SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA499 2SA500 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES: • High Breakdown Voltage : VcBO=-50V (Min.) (2SA499) : VCBO=-30V (Min.) (2SA500) • High Transition Frequency : f T=250MHz (Typ.) • Fast Switching Speed : t on=25ns (Typ.) • Complementary to 2SC400 and 2SC979. INDUSTRIAL APPLICATIONS Unit in mm MZf4.95MAX 00.45 02.54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector- Emitter Voltage 2SA499 2SA500 2SA499 2SA500 Emitter- Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC l stg RATING -50 -30 -40 -20 -5 -100 -20 250 175 -65^175 UNIT mA mA mW JED EC L EMITTER 2.