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SILICON NPN EPITAXIAL PLANAR TYPE
V
A
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =25W(Min.)
(f=470MHz, VCC=12.6V, Pi=10W) . 100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ V CC=12.6V, Pi=10W, f=470MHz
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C)
Junction Temperature Storage Temperature Range
v CB0 v CE0 v EB0 ic
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25 °C)
35 3.5
50 175
-65 -175
JEDEC
1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR
TOSHIBA
2 — 10 01
Mounting Kit No, AC57 Weight : 3.
2SC2173 Datasheet
