• Part: 2SC2173
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 62.13 KB
Download 2SC2173 Datasheet PDF
Toshiba
2SC2173
FEATURES . Output Power : P =25W(Min.) (f=470MHz, VCC=12.6V, Pi=10W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V CC=12.6V, Pi=10W, f=470MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range v CB0 v CE0 v EB0 ic Tstg ELECTRICAL CHARACTERISTICS (Ta=25 °C) 35 3.5 50 175 -65 -175 JEDEC 1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR TOSHIBA - 10 01 Mounting Kit No, AC57 Weight : 3.3g CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage ICBO V r. R =15V, I E=0 v (BR)CB0 I c=10m A, l£=0 v (BR)CE0 I C=25m A, I B=0 V (BR)EB0 I E=lm A, I C=0 DC Current Gain h FE Collector Output Capacitance Cob Output Power Po Power Gain Gpe V CE=5V, I...