• Part: 2SC2178
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 65.45 KB
Download 2SC2178 Datasheet PDF
Toshiba
2SC2178
FEATURES : . Output Power : P =15W (Min.) ( f=175MHz, VCC =12.5V, Pi=1.3W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=15V, Pi=1.3W, f=175MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL Vc BO VCEO VEBO IC Ti stg ELECTRICAL CHARACTERISTICS (Ta =25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current Collector-Base Breakdown Voltage ICBO V(BR)CB0 Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage v (BR) CEO V(BR)EB0 DC Current Gain h FE Collector Output Capacitance Cob Output Power Po Power Gain Collector Efficiency Series Equivalent Input Impedance Series Equivalent Output Impedance Gpe - c ^in ZOUT RATING 35 18 3.5 3.5 UNIT 1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR -65-175 EIAJ TOSHIBA 2- 10H1A Weight : 4.0g TEST...