Toshiba 2SC2290
Silicon NPN Epitaxial Planar Type Transistor
- Max Operating Temp : 175°C
Source:
Octopart
APPLICATIONS
(LOW SUPPLY VOLTAGE USE) l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min.) l Power Gain : Gp = 11.8dB (Min.) l Collector Efficiency : ηC = 35% (Min.) l Intermodulation Distortion: IMD = −30dB (Max.)MAXIMUM RATINGS
(Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 45 45 18 4 20 175 175 −65~175 UNIT V V V V A W °C °C JEDEC EIAJ TOSHIBA Weight: 5.2g Unit in mm — — 2−13B1A 000707EAA1● TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in makin...