Toshiba 2SC2510
Silicon NPN Epitaxial Planar Type Transistor
| Part No. | 2SC2510 |
|---|---|
| Datasheet | 2SC2510 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Epitaxial Planar Type Transistor |
| Buy | Stock & Price |
APPLICATIONS
(28V SUPPLY VOLTAGE USE) l Specified 28V, 28MHz Characteristics l Output Power : Po = 150WPEP (Min.) l Power Gain : Gp = 12.2dB (Min.) l Collector Efficiency : ηC = 35% (Min.) l Intermodulation Distortion: IMD = −30dB (Max.) Unit in mmMAXIMUM RATINGS
(Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 60 60 35 4 20 250 175 −65~175 UNIT V V V V A W °C °C JEDEC EIAJ TOSHIBA Weight: 5.2g — — 2−13B1A 000707EAA1● TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making...
