| Part number | 2SC2510 |
|---|---|
| Datasheet | 2SC2510-HGSemi.pdf |
| File Size | 410.03 KB |
| Manufacturer | HGSemi |
| Description | Silicon NPN POWER TRANSISTOR |
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HG Semiconductors 2SC2510HG RF POWER TRANSISTOR ROHS pliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150W PEP (Min.) Power Gain : Gp = 12.2dB (Min.) Collector Efficiency ηC:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC2510 | Silicon NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor |
|
2SC2510A | Silicon NPN epitaxial planar type Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 2SC2508 | Silicon NPN POWER TRANSISTOR |
| 2SC2558 | HG RF POWER TRANSISTOR |
| 2SC2559 | Silicon NPN POWER TRANSISTOR |
| 2SC2097 | HG RF POWER TRANSISTOR |
| 2SC2099 | Silicon NPN POWER TRANSISTOR |
| 2SC2101 | Silicon NPN POWER TRANSISTOR |
| 2SC2181 | Silicon NPN POWER TRANSISTOR |
| 2SC2290 | Silicon NPN POWER TRANSISTOR |
| 2SC2312 | Silicon NPN POWER TRANSISTOR |
| 2SC2330 | HG RF POWER TRANSISTOR |
