Datasheet Summary
HG Semiconductors
2SC2510HG RF POWER TRANSISTOR
ROHS pliance,Silicon NPN POWER TRANSISTOR
Specified 28V, 28MHz Characteristics
Output Power
: Po = 150W PEP (Min.)
Power Gain
: Gp = 12.2dB (Min.)
Collector Efficiency
ηC: = 35% (Min.)
Intermodulation Distortion : IMD = 30dB (Max.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector C urrent Collector Power Dissipation Junction T em perature Storage Temperature Range
SYMBOL
V CBO VCES VCEO
V EBO IC
PC Tj T stg
RATING
60 60 35 4 20 250 175 65~175
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
UNIT
V V V V A W °C °C
JEDEC EIAJ TOSHIBA...
