2SC2510 Overview
HG Semiconductors 2SC2510HG RF POWER TRANSISTOR ROHS pliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150W PEP (Min.) Power Gain : Gp = 12.2dB (Min.) Collector Efficiency ηC:.
| Part number | 2SC2510 |
|---|---|
| Datasheet | 2SC2510-HGSemi.pdf |
| File Size | 410.03 KB |
| Manufacturer | HGSemi |
| Description | Silicon NPN POWER TRANSISTOR |
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HG Semiconductors 2SC2510HG RF POWER TRANSISTOR ROHS pliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150W PEP (Min.) Power Gain : Gp = 12.2dB (Min.) Collector Efficiency ηC:.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SC2510 | Silicon NPN Epitaxial Planar Type Transistor | Toshiba Semiconductor | |
| 2SC2510A | Silicon NPN epitaxial planar type Transistor | Toshiba Semiconductor |