2SC2510A - Silicon NPN epitaxial planar type Transistor

Toshiba

Datasheet Details

Part number	2SC2510A
Manufacturer	Toshiba
File Size	219.96 KB
Description	Silicon NPN epitaxial planar type Transistor
Datasheet	2SC2510A Datasheet

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2SC2510A www.DataSheet4U.com TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 28V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 150WPEP (Min.) : Gp = 12.2dB (Min.) : ηC = 35% (Min.) Intermodulation Distortion : IMD = −30dB (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 60 60 35 4 20 250 175 −65~175 UNIT V V V V A W °C °C JEDEC EIAJ TOSHIBA Weight: 5.