Datasheet Summary
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE)
Unit in mm z z z z z Specified 28V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 150WPEP (Min.) : Gp = 12.2dB (Min.) : ηC = 35% (Min.)
Intermodulation Distortion : IMD =
- 30dB...
