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2SC2510

Manufacturer: Toshiba
2SC2510 datasheet preview

Datasheet Details

Part number 2SC2510
Datasheet 2SC2510_ToshibaSemiconductor.pdf
File Size 109.29 KB
Manufacturer Toshiba
Description Silicon NPN Epitaxial Planar Type Transistor
2SC2510 page 2 2SC2510 page 3

2SC2510 Overview

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) l Specified 28V, 28MHz Characteristics l Output Power : Po = 150WPEP (Min.) l Power Gain : Gp = 12.2dB (Min.) l Collector Efficiency.

2SC2510 Key Features

  • Specified 28V, 28MHz Characteristics
  • Output Power : Po = 150WPEP (Min.)
  • Power Gain : Gp = 12.2dB (Min.)
  • Collector Efficiency : ηC = 35% (Min.)
  • Intermodulation Distortion: IMD = −30dB (Max.) Unit in mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collec

2SC2510 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
HGSemi Logo 2SC2510 Silicon NPN POWER TRANSISTOR HGSemi
Toshiba logo - Manufacturer

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