2SC2510 - Silicon NPN Epitaxial Planar Type Transistor

Toshiba

Datasheet Details

Part number	2SC2510
Manufacturer	Toshiba
File Size	109.29 KB
Description	Silicon NPN Epitaxial Planar Type Transistor
Datasheet	2SC2510 Datasheet

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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) l Specified 28V, 28MHz Characteristics l Output Power : Po = 150WPEP (Min.) l Power Gain : Gp = 12.2dB (Min.) l Collector Efficiency : ηC = 35% (Min.) l Intermodulation Distortion: IMD = −30dB (Max.) Unit in mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 60 60 35 4 20 250 175 −65~175 UNIT V V V V A W °C °C JEDEC EIAJ TOSHIBA Weight: 5.