Datasheet Summary
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) l Specified 28V, 28MHz Characteristics l Output Power
: Po = 150WPEP (Min.) l Power Gain
: Gp = 12.2dB (Min.) l Collector Efficiency
: ηC = 35% (Min.) l Intermodulation Distortion: IMD =
- 30dB (Max.)
Unit in mm
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL
VCBO VCES VCEO VEBO
IC PC Tj Tstg
RATING
60 60 35 4 20 250 175
- 65~175
UNIT
V V V V A W °C...
