| Part Number | 2SC2510 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) l Specified 28V, 28MHz Characteristics l Output Power . s. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage . |
2SC2510 Datasheet and Specifications PDF
The 2SC2510 is a Silicon NPN Epitaxial Planar Type Transistor.
Key Specifications
| Max Operating Temp | 175 °C |
|---|
| Part Number | 2SC2510 Datasheet |
|---|---|
| Description | Silicon NPN POWER TRANSISTOR |
| Manufacturer | HGSemi |
| Overview | HG Semiconductors 2SC2510HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150W PEP (Min.) Power Gain : Gp = 12.2dB (Mi. ies Equivalent Output Impedance SYMBOL TEST CONDITION V(BR) CEO IC = 100mA, IB = 0 V(BR) CES IC = 100mA, VEB = 0 V (BR) EBO IE = 1mA, IC = 0 h FE VCE = 5V, CI = 10A * C ob V CB = 28V, EI = 0 f = 1MHz Gp Pi ηC IMD V CC = 28V, 1f = 28.000MHz, f2 = 28.001MHz Iidle = 100mA Po = 150W PEP (Fig.). |