Toshiba 2SC2655
Silicon NPN TRANSISTOR
| Part No. | 2SC2655 |
|---|---|
| Datasheet | 2SC2655 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
Power SwitchingAPPLICATIONS
IndustrialAPPLICATIONS
Unit: mm● Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
● High collector power dissipation: PC = 900 mW
● High-speed switching: tstg = 1.0 μs (typ.)
● Complementary to 2SA1020.
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.5 A JEDEC TO-92MOD Collector power dissipation Junction temperature Storage temperature range PC 900 mW Tj 150 °C Tstg −55 to 150 °C JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please...
