Toshiba 2SC2710
Silicon NPN TRANSISTOR
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | 2SC2710 |
|---|---|
| Datasheet | 2SC2710 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm● High DC current gain: hFE (1) = 100~320
● Complementary to 2SA1150
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 800 160 300 150 -55~150 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 35 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE (1) (Note) VCE = 1 V, IC = 100 mA hFE (2) VCE (sat) VBE fT Cob VCE = 1 V, IC = 700 mA IC = 500 mA, IB = 20 mA VCE = 1 V, IC = 10 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 100~200, Y: 160~320 JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Min Typ.
