• Part: 2SC2754
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 77.31 KB
Download 2SC2754 Datasheet PDF
Toshiba
2SC2754
2SC2754 is Silicon NPN Transistor manufactured by Toshiba.
) ) ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS, LOW FREQUENCY AMPLIFIER APPLICATIONS, HIGH SPEED SWITCHING APPLICATIONS. Unit in mm . High Transition Frequency : f T=400MHz(Typ. . Low Vc E(sat) : V CE ( sat) =0. 5V(Max. . Small Collector Output Capacitance : C b=3. 5p F(Max. . High Speed Switching. . Designed for plementary Use with 2SA1164. MAXIMUM RATINGS (Ta=2 5°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation VEBO ic IB PC 100 m A 50 m A 200 m W 1. EMITTER 2. COLLECTOR 3. BASE Junction Temperature Storage Temperature Range Tj Tstg -55-125 ELECTRICAL CHARACTERISTICS (Ta=25°c) CHARACTERISTIC SYMBOL TEST CONDITION Weight : 0l2 1j MIN. TYP. MAX. Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage I CB0 l EBO h FE (Note) V CB =35V, I E=0 V EB=5V, I C =0 V CE =12V, I c =2m A V CE(sat) IC=10m A, Ig=lm...