Toshiba 2SC3076
Silicon NPN Transistor
| Part No. | 2SC3076 |
|---|---|
| Datasheet | 2SC3076 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
Power SwitchingAPPLICATIONS
2SC3076 Unit: mm● Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
● Excellent switching time: tstg = 1.0 μs (typ.)
● Complementary to 2SA1241
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.0 W 10 Junction temperature Tj 150 °C JEDEC ― Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-7J1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.36 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon...
